Because carbon nanotubes have unique electrical properties, mechanical properties, superior physical and chemical stability, and easy inking, carbon nanotubes become one of the most desirable semiconductor materials for printed thin film transistors, especially flexible thin film transistors. Although the semiconductor carbon nano-purification technology has matured, the mass production of high-purity semiconducting carbon nanotubes, the accurate positioning of carbon nanotubes, and the construction of high-performance n-type printed carbon nanotube transistors are still constraints on printed carbon nanometers. The bottleneck in the application of thin-film transistors remains to be further studied.
Recently, Zhao Jianwen’s research team at the Printed Electronics Center of the Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences, teamed up with the Machang Group research team to design and synthesize a series of polymers (PDPPb5T) and macromolecules that can efficiently separate high-purity semiconducting carbon nanotubes. Conjugated compounds such as 6T, 9T, 12T, etc.). The carbon nanotube thin film transistor fabricated by separating the semiconducting carbon nanotube ink using the PDPPb5T and printing has reached a mobility of 40 cm^2V^-1 s^-1, the on-off ratio reaches 3×10^7, and the sub-threshold swing reaches 130-146. mV/dec (Figure 1). In collaboration with Japan's AIST and the Institute for High-Performance Computing in Singapore, an in-depth study was conducted on the mechanism of selective separation of semiconducting carbon nanotubes by polymers (Figure 2). Based on this, a CMOS inverter with excellent performance has been constructed. The related work has been published in Nanoscale, 2016, 8, 4588-4598.
Based on the above work, Zhao Jianwen's research team selectively printed P-DPPb5T and PFO-TP separated semiconducting carbon nanotube inks in different areas of the same flexible substrate by adjusting the printing process to construct a small hysteresis, subthreshold swing. Small (n-type 172 mV/dec and p-type 162 mV/dec) n-type and p-type carbon nanotube thin-film transistor devices with high switching and switching rates of ~10^5 and ~15 cm^2V, respectively ^-1s^-1, and made a flexible CMOS inverter and 3rd-order ring oscillator. Its CMOS inverter has a gain of 30, a noise margin of 84%, and a power consumption of only 0.1 μW at Vdd =1 V. The 3rd-order ring oscillator can reach an oscillation frequency of 3.3 KHz (Figure 3). Related work has been published in Small, 2016, DOI: 10.1002/smll.201600452.
Zhao Jianwen has been engaged in the selective separation of solubilized semiconducting carbon nanotubes and the construction and application of high-performance carbon nanotube thin film transistor devices since 2008, in Chem. Commun., 2009, 7182-7184; JACS, 2010, 132 (47): 16747-9; JPCC 2011, 115, 6975; Sci China Chem, 2011, 54, 1484-1490 published 4 papers, and applied for US patent 2 patents (Patent US20130040439 and Patent US20120171103). Since joining the Printed Electronics Research Department of Suzhou Nanometer Institute of Chinese Academy of Sciences in 2010, he has been focusing on the application of printable semiconducting carbon nanotube inks for mass production, high-performance flexible printed thin film transistor devices and circuits. Achieved mass production of printable high-purity semi-conducting carbon nanotube ink (as shown in Figure 4), publication of 15 printed carbon nanotube thin-film transistors and printed circuit research papers, 15 patent applications (2 granted patents: ZL 2012 1 056384.3 and ZL 2012 1 0102957.8).
The above work received strong support from the National Natural Science Foundation of China, the "973" project of the Ministry of Science and Technology, the pilot project of the Chinese Academy of Sciences, and the Jiangsu Provincial Natural Science Fund and the Suzhou Nanfang Institute's own fund.
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